ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 opti mos ? power-transistor features ? n-channel logic level - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green package (lead free) ? ultra low rds(on) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25 c, v gs =10 v 80 a t c =100 c, v gs =10 v 2) 58 pulsed drain current 2) i d,pulse t c =25 c 320 avalanche energy, single pulse 2) e as i d =80a 280 mj gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 158 w operating and storage temperature t j , t stg -55 ... +175 c value v ds 55 v r ds(on),max (smd version) 10.7 m w i d 80 a product summary pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 type package ordering code marking ipb80n06s2l-11 pg-to263-3-2 sp0002-18177 2n06l11 ipp80n06s2l-11 pg-to220-3-1 sp0002-18175 2n06l11 ipi80n06s2l-11 pg-to262-3-1 sp0002-18176 2n06l11 rev. 1.1 page 1 2010-10-26
ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - 0.95 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 5) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 55 - - v gate threshold voltage v gs(th) v ds = v gs , i d =93 a 1.2 1.6 2.0 zero gate voltage drain current i dss v ds =55 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =55 v, v gs =0 v, t j =125 c 2) - 1 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =40 a - 10.7 14.7 m w v gs =4.5 v, i d =40 a, smd version - 10.4 14.4 drain-source on-state resistance r ds(on) v gs =10 v, i d =40 a, - 8 . 7 1 1 . 0 m v gs =10 v, i d =40 a, smd version - 8.4 10.7 values rev. 1.1 page 2 2010-10-26
ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 parameter symbol conditions unit min. typ. max. dynamic characteristics 2) input capacitance c iss - 2075 - pf output capacitance c oss - 585 - reverse transfer capacitance c rss - 197 - turn-on delay time t d(on) - 11 - ns rise time t r - 32 - turn-off delay time t d(off) - 46 - fall time t f - 13 - gate charge characteristics 2) gate to source charge q gs - 7 9 nc gate to drain charge q gd - 21 30 gate charge total q g - 62 80 gate plateau voltage v plateau - 3.6 - v reverse diode diode continous forward current 2) i s - - 80 a diode pulse current 2) i s,pulse - - 320 diode forward voltage v sd v gs =0 v, i f =80 a, t j =25 c - 1 1.3 v reverse recovery time 2) t rr v r =30 v, i f = i s , d i f /d t =100 a/s - 54 67 ns reverse recovery charge 2) q rr - 61 76 nc 1) current is limited by bondwire; with an r thjc = 0.95k/w the chip is able to carry 83a at 25c. for detailed information see application note anps071e at www.infineon.com/optimos t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =30 v, v gs =10 v, i d =80 a, r g =3 w v dd =44 v, i d =80 a, v gs =0 to 10 v 2) defined by design. not subject to production test. 3) see diagram 13 4) qualified at -20v and +20v. 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 1.1 page 3 2010-10-26
ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 1 power dissipation 2 drain current p tot = f( t c ); v gs 4 v i d = f( t c ); v gs 1 0 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 0 10 -1 10 -2 10 -3 t p [s] z t h j c [ k / w ] 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 t c [c] p t o t [ w ] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [ a ] 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [ a ] rev. 1.1 page 4 2010-10-26
ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = ( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d = f( v gs ); v ds = 6v g fs = f( i d ); t j = 25c parameter: t j parameter: g fs 2.5 v 3 v 3.5 v 4 v 10 v 0 50 100 150 200 250 300 0 2 4 6 8 10 v ds [v] i d [ a ] -55 c 25 c 175 c 0 20 40 60 80 100 120 140 160 1 2 3 4 v gs [v] i d [ a ] 0 50 100 150 0 50 100 150 200 i d [a] g f s [ s ] 4 v 4.5 v 10 v 7 9 11 13 15 0 20 40 60 80 100 120 i d [a] r d s ( o n ) [ m w ] rev. 1.1 page 5 2010-10-26
ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 9 typ. drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) = f( t j ) v gs(th) = f( t j ); v gs = v ds parameter: i d = 40 a; v gs = 10 v parameter: i d 11 typ. capacitances 12 typical forward diode characteristicis c = f( v ds ); v gs = 0 v; f = 1 mhz if = f(v sd ) parameter: t j 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [ a ] ciss coss crss 10 4 10 3 10 2 0 5 10 15 20 25 30 v ds [v] c [ p f ] 93 a 465 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v g s ( t h ) [ v ] 0 2 4 6 8 10 12 14 16 18 20 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m w ] rev. 1.1 page 6 2010-10-26
ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 13 typical avalanche energy 14 typ. gate charge e as = f( t j ) v gs = f( q gate ); i d = 80 a pulsed parameter: i d = 80a 15 typ. drain-source breakdown voltage 16 gate charge waveforms v br(dss) = f( t j ); i d = 1 ma 0 50 100 150 200 250 300 25 75 125 175 t j [c] e a s [ m j ] v gs q gate q gs q gd q g v gs q gate q gs q gd q g 11 v 44 v 0 2 4 6 8 10 12 0 20 40 60 q gate [nc] v g s [ v ] 46 48 50 52 54 56 58 60 62 64 66 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] rev. 1.1 page 7 2010-10-26
ipb80n06s2l-11 ipp80n06s2l-11, ipi80n06s2l-11 published by infineon technologies ag st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 2004 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office (www.infineon.com) warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.1 page 8 2010-10-26
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